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EE3001:Solid State Devices
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Consider a p-type silicon sample with Ef = E = Ei + 0.25 eV. The built-in (contact) potential across the junction of these two materials (in Volts) is ………
1016 phosphorus atoms/cm3 are introduced in Si. Assuming complete ionization, EG,Si = 1.12 eV, Nc=3.2 x 1019(T/300)1.5 cm−3 and Nv=1.8 x 1019 (T/300)1.5 cm−3, kBT=0.026 eV (at 300 K) and ni = 1010 /cm3 (at 300 K), find out Ec −Ef at 600K. Enter answer without units upto four significant digits