Calculate the conductivity of n-type Si at RT. Express your answer to 0 decimal places in units of (Ωm)^-1. You need only consider the primary charge carriers at this temperature.  

n_e at RT = 2.8 x 10²¹/m³

mobility of electrons at RT = 550 m²/(V•s)

n_h at RT = 6 x 10¹⁶/m³

mobility of holes at RT = 510 m²/(V•s)

charge (q) is q = 1.602 x 10^-19 Coulombs = 1.602 x 10^-19 Amp•sec

Consider the circuit diagram below:

Which of the following breadboard circuits implements this circuit correctly?

Notes:

The power supply is set to 5V.

The resistors in the breadboards are all 150 Ω. 

This image may be useful:  

What is the power absorbed in Watts by a resistor with resistance of 7.9Ω connected to a current source of 6 Amps? Give your answer to 3 dp.

If i = -1A, v = 5V, the circuit element below is supplying power. True or false?

Calculate the conductivity of n-type Si at RT. Express your answer to 0 decimal places in units of (Ωm)^-1. You need only consider the primary charge carriers at this temperature.  

n_e at RT = 3.4 x 10²¹/m³

mobility of electrons at RT = 550 m²/(V•s)

n_h at RT = 6 x 10¹⁶/m³

mobility of holes at RT = 510 m²/(V•s)

charge (q) is q = 1.602 x 10^-19 Coulombs = 1.602 x 10^-19 Amp•sec

Given the code shown, how many lines will be printed on the console?