Given the code shown below, map out its execution flow in steps.

Given the code shown below

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Correctly identify the scope of all the unique variables shown.

What makes silicon a bad candidate for LED?

Calculate the conductivity of n-type Ge at RT. Express your answer to 0 decimal places in units of (Ω•m)^-1. You need only consider the primary charge carriers at this temperature.

n_e at RT = 4.9 x 10²¹/m³

mobility of electrons at RT = 580 m²/(V•s)

n_h at RT = 6 x 10¹⁶/m³

mobility of holes at RT = 420 m²/(V•s)

charge (q) is q = 1.602 x 10^-19 Coulombs = 1.602 x 10^-19 Amp•sec

In an extrinsic n-type semiconductor, holes have a higher mobility than electrons because they have higher number of charges

When a germanium is doped with phosphorus, there is an extra electron in the semiconductor. Where does this electron locate itself in the band diagram?

Consider the circuit diagram below:

Which of the following breadboard circuits implements this circuit correctly?

Notes:

The power supply is set to 5V.

The resistors in the breadboards are all 150 Ω. 

This image may be useful:  

In the circuit below, v_s = -3 Volts, R₁ = 4Ω, R₂ = 4Ω. Find i in Amps. Give your answer to 3 decimal places.

For the loop picture below, v₁ = 3 V, v₂ = 3 V and v₃ = 2 V. Find v_x in Volts.