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=
1,6×10
-19 C.Nous voulons doper le silicium pour augmenter sa conductivité jusqu'à σ = 100 S.m , à 300 K. Quelle concentration d'atomes de phosphore est nécessaire ?
Données : Données : μ
Dans une diode, le potentiel de jonction est de 0,75 V. Calculez le champ électrique moyen E dans la jonction. Prendre comme largeur de la zone de charge d’espace : W
of
N dopant atoms to increase its conductivity, at constant temperature.
Calculate the concentration of holes p.In a diode, the junction potential is 0.75 V. Calculate the average electric field E in the junction. Take as width of the depleted area : W
For a PN junction in forward (direct ) bias (V
Pour une jonction PN en polarisation directe (V
We want to dope Silicon to increase its conductivity up to , at 300 K. Which concentration of Phosphorus atoms is needed ?
Use : μn = 0,14 m = 1,6×10
To which logic gate does this scheme correspond?
m. The difference in potential between the P and N regions is: