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CC - P1 - Promo 2029

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Use : μn= 0,14 m.V-1 .s-1  and e

 =

1,6×10

-19 C.

57%
0%
14%
0%
29%
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Nous

voulons doper le silicium pour augmenter sa conductivité jusqu'à σ

n

= 100 S.m

-1

, à 300 K. Quelle concentration d'atomes de phosphore est nécessaire

?

Données : Données :

μ

n= 0,14 m2 . V-1 .s-1 et e = 1,6×10-19 C.

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Dans une

diode, le potentiel de jonction est de 0,75 V. Calculez le champ électrique

moyen E dans la jonction. Prendre comme largeur de la zone de charge d’espace :

W

0 = 4,0 ×10-3 m.

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We add N= 4 ×1022 m-3

 of

N dopant atoms to increase its conductivity, at constant temperature. 

Calculate the concentration of holes p.

0%
0%
71%
29%
0%
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In a

diode, the junction potential is 0.75 V. Calculate the average electric field E

in the junction.

Take as width

of the depleted area : W

0 = 4.0 ×10-3 m.

0%
0%
0%
0%
0%
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For a

PN junction in forward (direct ) bias (V

diode > 0):

0%
0%
0%
0%
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Pour une

jonction PN en polarisation directe (V

diode > 0) :

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We

want to dope Silicon to increase its conductivity up to

σn = 1000 S.m-1

,

at 300 K. Which concentration of Phosphorus atoms is needed ?

Use : μn

= 0,14

m

2.V-1.s-1  and e

 =

1,6×10

-19 C.

View this question

To

which logic gate does this scheme correspond?

0%
0%
0%
0%
0%
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m. The difference in potential between the P and N

regions is:

0%
0%
0%
0%
0%
View this question

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