Let us consider a diode (pn junction) that was fabricated by adding 4.9 x10²² P atoms per m³ to create n-type Si and 1x10²² B atoms per m³ to create the p-type Si. Calculate the electrical conductivity of the n-type side of the diode at room temperature. Express your answer in ohm-m.

Information you may need: q = 1.602 x 10^-19 Amp.sec; mobility of electrons in Si at room temperature =1400 x 10⁴ m²/(V.sec); mobility of holes in Si at room temperature = 450 x 10^-4 m²/(V.sec)

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