Calculate the resistivity of a p-type semiconductor at room temperature (RT). Consider only the primary charge carriers at this temperature.

Concentration of holes (p) at RT = 8 x 10^17 /m^3

Mobility of holes (μ_h) at RT = 180 m^2/(V•s)

Concentration of electrons (n) at RT = 2 x 10^15 /m^3

Mobility of electrons (μ_e) at RT = 120 m^2/(V•s)

Charge (q) = 1.602 x 10^-19 C