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ENG1013 - Engineering Smart Systems - S1 2025
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Calculate the conductivity of n-type Si at RT. Express your answer to 0 decimal places in units of (Ωm)-1. You need only consider the primary charge carriers at this temperature.
ne at RT = 3.2 x 1021/m3
mobility of electrons at RT = 550 m2/(V•s)
nh at RT = 6 x 1016/m3
mobility of holes at RT = 510 m2/(V•s)
charge (q) is q = 1.602 x 10-19 Coulombs = 1.602 x 10-19 Amp•sec
Calculate the conductivity of n-type Ge at RT. Express your answer to 0 decimal places in units of (Ω•m)-1. You need only consider the primary charge carriers at this temperature.
ne at RT = 4.8 x 1021/m3
mobility of electrons at RT = 580 m2/(V•s)
nh at RT = 6 x 1016/m3
mobility of holes at RT = 420 m2/(V•s)
charge (q) is q = 1.602 x 10-19 Coulombs = 1.602 x 10-19 Amp•sec
Calculate the conductivity of n-type Si at RT. Express your answer to 0 decimal places in units of (Ωm)-1. You need only consider the primary charge carriers at this temperature.
ne at RT = 3 x 1021/m3
mobility of electrons at RT = 550 m2/(V•s)
nh at RT = 6 x 1016/m3
mobility of holes at RT = 510 m2/(V•s)
charge (q) is q = 1.602 x 10-19 Coulombs = 1.602 x 10-19 Amp•sec