Calculate the conductivity of n-type Ge at RT. Express your answer to 0 decimal places in units of (Ω•m)^-1. You need only consider the primary charge carriers at this temperature.

n_e at RT = 3.7 x 10²¹/m³

mobility of electrons at RT = 580 m²/(V•s)

n_h at RT = 6 x 10¹⁶/m³

mobility of holes at RT = 420 m²/(V•s)

charge (q) is q = 1.602 x 10^-19 Coulombs = 1.602 x 10^-19 Amp•sec

In the circuit below, v_s = -5 Volts, R₁ = 6Ω, R₂ = 8Ω. Find i in Amps. Give your answer to 3 decimal places.

In the circuit below, i = 1.3 Amps, R₁ = 2Ω and R₂ = 9.2Ω. Find V_s in Volts to 2dp.

For the loop picture below, v₁ = 3 V, v₂ = 3 V and v₃ = 2 V. Find v_x in Volts.

At the node picture below, i₁ = 0 A, i₂ = 0 A and i₃ = 4 A. Find i_x in Amps.

How many nodes are in this circuit? Express your answer as an integer.

If i = -1A, v = 5V, the circuit element below is supplying power. True or false?

What is the power absorbed in Watts by a resistor with resistance of 1.4Ω is connected to a voltage source of 8.2 Volts? Give your answer to 3 dp.