For the CE amplifier below, the bias point will be sensitive to PVT variations.

For the circuit below, assume the BJT is in active mode and VBE,ON = 0.7 V. If RE = 2.6 kOhm, then gm (in mS) is approximately equal to ....

Hint: gm = IC/VT. Assume VT = 26mV. Assume beta is very large.

For the circuit below, assume the BJT is in active mode and VBE,ON = 0.7 V. If RE = 2.2 kOhm, then IC (in mA) is approximately equal to ..... 

Hint: Assume beta is very large.

For a BJT, if VBE is kept constant and VCE is decreased, the BJT enters saturation mode. When the BJT enters saturation

For the amplifier circuit shown below, assume the BJT is biased in active mode. If RC = 4.3 kOhm and the required gain is -67, then the amplifier should be designed such that IC (in mA) is approximately equal to ....

Hint: gm = IC/VT. Assume VT = 26mV.

For the amplifier circuit shown below, assume the BJT is biased in active mode. If the input amplitude is 1 mV, RC = 1.4 kOhm and IC =  1.7 mA, then the output amplitude (in mV) is approximately equal to .....

Hint: gm = IC/VT. Assume VT = 26mV.

For the circuit below, if RC = 3 kOhm, then VCE (in Volts) is approximately equal to .....

Hint: Assume beta is very large.

A BJT transistor is biased such that it has a collector current IC = 1mA independent of temperature. At a temperature of 62 degree Celsius, the transconductance (gm) (in mS) is equal to .....    

Hint: You can use the approximate value of VT at room temperature to calculate the value of VT at any other temperature:

VT (at temperature To in Kelvin) = 26mV * To/300

gm = IC/VT.

For the amplier circuit shown below, assume the BJT is biased in active mode. If the input is sinusoidal with amplitude = 1 mV, VCC = 12 V, RC = 3.1 kOhm and IC =  1.7 mA, then the maximum total voltage (dc + ac) at Vout (in V) is approximately equal to .....

Hint: gm = IC/VT. Assume VT = 26mV.