Which of the following statements is correct about the band structure of n-type extrinsic semiconductors that are commonly used (ie: silicon)?

Question

Which of the following statements is correct about the band structure of  n-type  extrinsic semiconductors that are commonly used (ie: silicon)?

Answer

The n-type energy level lies in the middle of the bandgap.

Answer

The bandgap is usually > 4eV

Answer

The donor energy level is below the conduction band.

Answer

The acceptor energy level is above the valence band.

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