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ECE3161 Analogue Electronics - MUM S2 2025

ECE3161 Analogue Electronics - MUM S2 2025

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PL2.1: What is the key characteristic of an ideal constant current source? Choose from one of the following below:

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Infinite output resistance

Zero output voltage

Zero output impedance

Infinite input voltage

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Q10. Find drain current and source voltage

For the circuit given below, find the drain current, I_D and source voltage V_S. Assume that the N channel depletion JFET has $I_{DSS}=15$ I_{DSS}=15 mA , $V_{GS(\text{off)}}=-3$ V_{GS(\text{off)}}=-3 V and $\lambda=0$ \lambda=0.

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I_D = 2.58 mA , V_S = 0.56 V

I_D = 2.58 mA , V_S = 1.76 V

I_D = 2.78 mA , V_S = 1.76 V

I_D = 2.58 mA , V_S = -0.56 V

I_D = 2.78 mA , V_S = -1.76 V

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Q9 . Find drain current

For the N channel depletion JFET given below, find the drain current, I_D. Assume that the N channel depletion JFET has $I_{DSS}=10$ I_{DSS}=10 mA and $V_{GS(\text{off)}}=-4$ V_{GS(\text{off)}}=-4 V, $\lambda=0$ \lambda=0 .

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I_D = 2.09 mA

I_D = 0.99 mA

I_D = 2.29 mA

I_D = 3.29 mA

I_D = 1.19 mA

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Q8. Find Drain and Gate Resistances

Find R_D, R_G, if the NMOS in the setup below carries 8 mA drain current. The NMOS was characterized separately so that it carried 5 mA current when biased with $V_{GS}=4$ V_{GS}=4 V. The NMOS has a threshold voltage of 2.5 V and its $\lambda = 0$ \lambda = 0.

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$R_D = 1.85 \text{k}\Omega$ R_D = 1.85 \text{k}\Omega , R_G can take any value

$R_D = 0.89 \text{k}\Omega$ R_D = 0.89 \text{k}\Omega , R_G can take any value

$R_D = 1.95 \text{k}\Omega$ R_D = 1.95 \text{k}\Omega , $R_G = 2.2 \text{k}\Omega$ R_G = 2.2 \text{k}\Omega

$R_D = 1.85 \text{k}\Omega$ R_D = 1.85 \text{k}\Omega , $R_G = 2.9 \text{k}\Omega$ R_G = 2.9 \text{k}\Omega

$R_D = 1.95 \text{k}\Omega$ R_D = 1.95 \text{k}\Omega , R_G can take any value

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Q7. Find the source and drain resistances, and drain current

Find R_D, R_S, I_d for the NMOS with k_n=4 mA/V², V_t=0.4 V, and $\lambda = 0$ \lambda = 0.

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$R_D = 25 \text{k}\Omega$ R_D = 25 \text{k}\Omega, $R_S = 10 \text{k}\Omega$ R_S = 10 \text{k}\Omega, I_d = -0.045 mA

$R_D = 20 \text{k}\Omega$ R_D = 20 \text{k}\Omega, $R_S = 10 \text{k}\Omega$ R_S = 10 \text{k}\Omega, I_d = 0.045 mA

$R_D = 20 \text{k}\Omega$ R_D = 20 \text{k}\Omega, $R_S = 20 \text{k}\Omega$ R_S = 20 \text{k}\Omega, I_d = 0.145 mA

$R_D = 10 \text{k}\Omega$ R_D = 10 \text{k}\Omega, $R_S = 10 \text{k}\Omega$ R_S = 10 \text{k}\Omega, I_d = 0.145 mA

$R_D = 10 \text{k}\Omega$ R_D = 10 \text{k}\Omega, $R_S = 10 \text{k}\Omega$ R_S = 10 \text{k}\Omega, I_d = 0.045 mA

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Q6. Find the drain voltage

Find the drain voltage V_D of the NMOS with k_n=10 mA/V², V_t=0.5 V, and $\lambda = 0$ \lambda = 0.

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$V_{D} = 2.9$ V_{D} = 2.9 V

$V_{D} = 2.3$ V_{D} = 2.3 V

$V_{D} = 1.5$ V_{D} = 1.5 V

$V_{D} = 1.8$ V_{D} = 1.8 V

$V_{D} = 2.5$ V_{D} = 2.5 V

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Q4. Find the voltage

Assuming both transistors are active and each has $\beta=100$ \beta=100, find the voltage V_B.

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$V_{B} = 9.03$ V_{B} = 9.03 V

$V_{B} = 5.13$ V_{B} = 5.13 V

$V_{B} = 3.53$ V_{B} = 3.53 V

$V_{B} = 2.93$ V_{B} = 2.93 V

$V_{B} = 4.73$ V_{B} = 4.73 V

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Q4. Find the voltages

For the two transistor circuit given , find voltages $V_{b1}$ V_{b1} and V_e assuming both transistors are active and their transistor $\beta$ \beta values are extremely high.

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$V_{b1} = -0.7$ V_{b1} = -0.7 V, $V_{e} = -1.4$ V_{e} = -1.4 V

$V_{b1} = -0.8$ V_{b1} = -0.8 V, $V_{e} = -0.4$ V_{e} = -0.4 V

$V_{b1} = 0.7$ V_{b1} = 0.7 V, $V_{e} = 2.4$ V_{e} = 2.4 V

$V_{b1} = 0.8$ V_{b1} = 0.8 V, $V_{e} = -1.4$ V_{e} = -1.4 V

$V_{b1} = 0.7$ V_{b1} = 0.7 V, $V_{e} = -2.4$ V_{e} = -2.4 V

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Q3. Find the base bias voltage

If the NPN transistor below is at the edge of saturation, what would be the bias voltage $V_{BB}$ V_{BB}.

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$V_{BB} = 1.34$ V_{BB} = 1.34 V

$V_{BB} = 0.24$ V_{BB} = 0.24 V

$V_{BB} = 1.64$ V_{BB} = 1.64 V

$V_{BB} = 2.34$ V_{BB} = 2.34 V

$V_{BB} = -1.34$ V_{BB} = -1.34 V

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