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Course 86819
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In Pseudo-NMOS Logic Inverter. The NMOS Gate is connected to:
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A 0.25E-6 CMOS process has: VDD =1.5 V, Vtn = -Vtp = 0.5 V, k’n = 400E-6 A/V2 , k’p =130E-6 A/V2 , No channel length modulation, (W/L)n = (W/L)p = 1.5, and VDsat for QN = 0.4 V. Calculate ID for QN in the case Without / With Velocity Saturation, Given: VGS = VDS = VDD
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A CMOS Inverter is Fabricated using 0.25E-6 m technology having: W/L = 2 for QN, and W/L = 5 for Qp, and driving a capacitor =20 fF. Using the Equivalent Resistance Approach for QN and Qp, Calculate RN, tPHL, RP, tPLH, and tP for a step input.
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An inverter consists of QN connected to VDD = VGS = 2.5 V by RD. Given Vt = 0.5 V, K’n =100E-6 A/V.V. If ID =50 E-6 A, and VOL = 100 mV. Calculate: rDS, W/L of QN, RD, and P dissipation.
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A CMOS Inverter is Operating at Maximum Frequency of 1GHz, driving a capacitor of 10 fF with VDD = 5 V. Calculate Pdyn, PDP, and EDP
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An inverter Consists of QN and RD Connected to VDD = 5 V. Given K’n = 300E-6 A/V.V, Vt =0.5 V and W/L = 4, Find the Maximum Value of RD to Remain In Saturation Region if VGS = VDD/2.
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If For a Standard CMOS Inverter W/L = n For QN. And W/L = p For QP. Find W/L For the PDN, And W/L For the PUN in a CMOS gate with output Y. Given Ybar = a + (bc)
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A Matched CMOS Inverter Fabricated in 0.25E-6 m Process with VDD = 4 V, Vtn = -Vtp = 0.5 V, and Wp/Wn = 6, Qn Has W/L = 1, and K’n = 450E-6 A/V.V. Find VOH, VOL, VM, Wn and Wp.
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