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CC - P1 - Promo 2029

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A semiconductor is made by

assembling Arsenic and Gallium (GaAs). GaAs crystalises like Silicon, in fcc + tetrahedral sites. Can it be doped with phosphorus?

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What is the unit of the

diffusion coefficient?

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The mobility of charge carriers depends on the temperature. How?

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If the resistivity of Silicon

is 10

3 Ohm.m, what is the resistance of a piece of Silicon 1 cm long and 1 cm2

in cross-section?

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Quelle est la relation entre

résistance et résistivité, sachant que la résistivité ρ s’exprime en

.m ?

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Conduction is :

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On fabrique un semiconducteur

par assemblage d’arsenic et de gallium (GaAs), qui forme un réseau CFC + sites tetrahédriques comme le Silicium. Peut-on le doper à

l’azote ?

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Une concentration d'électron initialement de n(0) = 1016 cm-3 en x= 0 décroît exponentiellement en suivant la formule : n = n(0).exp(-x/10-6), avec x exprimé en m. Quelle est la concentration d'électrons à x = 2.10-6 m ?

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In the equation : n = n0 exp(-x/Ln), what is Ln ?

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La conductivité dépend :

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