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25-26 EE2060: Electronic materials and devices

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Ignoring the compromises that would need to be made in other design parameters, what factors can be varied to optimise data writability (reduce the write field) in hard disk drive designs?

(Tick all that apply, incorrect answers will lower mark)

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How is data written onto a hard disk?

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Which of the following conditions form part of Mott’s two-current model?

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If the length of a solenoid was along the horizontal axis of the screen, which of these statements could describe the direction of the magnetic field at its centre when a current was passed through it?

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During calibration, a Hall sensor is placed in a

magnetic field.  The Hall sensor is made from a square

semiconductor of surface area

 and thickness with carrier concentration of  and operates using an current.

Plank’s constant , the speed of light

and the

proton charge

.

 

Calculate the Hall voltage generated at optimum orientation

in

, stating your answer to 1 decimal place.

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What is the physical origin of giant magnetoresistance?

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A sample is connected to the appropriate equipment to quantify a particular effect. The sample consists of a ferromagnetic metal. With no magnetic field applied, current is passed through the sample in a direction perpendicular to the magnetization direction and measurements are taken. A magnetic field is applied to align the magnetization with the current direction and measurements are taken again.

What effect is being quantified?
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In an n-channel metal-oxide-semiconductor field effect

transistor, a small negative potential is applied to the Source and a small

positive potential is applied to the Drain.  A positive Gate voltage is applied to create

an inversion layer.

Which of the following actions occur as a result of this

process?

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A small DC Source-Drain voltage is applied to an n-channel

junction field effect transistor, with the negative terminal applied to the

Source.  No voltage is applied to the

Gate.  

Which of the following is true?

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Which of the following describe the Breakdown region of a bipolar

junction transistor?

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