In an n-channel metal-oxide-semiconductor field effect
transistor, a small negative potential is applied to the Source and a small
positive potential is applied to the Drain. A positive Gate voltage is applied to create
an inversion layer.

Which of the following actions occur as a result of this
process?

(Tick all that apply, incorrect answers will lower mark)

Question

In an n-channel metal-oxide-semiconductor field effect
transistor, a small negative potential is applied to the Source and a small
positive potential is applied to the Drain.  A positive Gate voltage is applied to create
an inversion layer.

Which of the following actions occur as a result of this
process?

(Tick all that apply, incorrect answers will lower mark)

Answer

Electrons in the n-type region below the Source drift towards the Drain

Answer

Holes in the p-type region drift towards the Gate

Answer

Electrons in the n-type region below the Drain drift towards the Source

Answer

Electrons in the p-type region diffuse towards the Gate

Answer

Holes in the p-type region diffuse away from the Gate

Answer

Electrons in the p-type region drift away from the Gate

Answer

Electrons in the p-type region drift towards the Gate

Answer

Electrons in the p-type region diffuse away from the Gate

Answer

Electrons in the n-type region below the Source diffuse towards the Drain

Answer

Electrons in the n-type region below the Drain diffuse towards the Source

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In an n-channel metal-oxide-semiconductor field effect transistor, a small nega...

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