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Consider a 2-input dynamic NAND gate with VDD = 2 V, Vtn = 0.5 V = - Vtp, K’n = ...
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Consider a 2-input dynamic NAND gate with VDD = 2 V, Vtn = 0.5 V = - Vtp, K’n = 3 K’p = 300E-6 A/V2 W/L = 1.5 for all QN, W/L =3 for all QP, and CL = 10 fF (completely Discharged). During Precharge: Calculate ID at Vout = VY = 0.1 VDD. If ID = 82.5E-6 A at Vout = VY = 0.9 VDD, Calculate the rise time tr.
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