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For a MOS transistor operating in saturation.
if the aspect ratio "W/L" is multiplied by 1.7, then the current "Id" is multiplied by how much?
For a MOS transistor operating in pinch-off saturation.
if the Overdrive voltage "Vov" is multiplied by 2.2, then the drain current "ID" is multiplied by how much?
One important property that measures the performance of the transistor in analog design is the current efficiency, which is the transconductrance per unit current (gm/IC for BJT and gm/ID for MOSFET). Usually we need large transconductance, but we want to spend small current because we want to save the energy of our battery. So the higher the current efficiency, the better.
If Vov = 0.18, the MOSFET current efficiency (gm/ID) is equal to ..... S/A.
One important property that measures the performance of the transistor in analog design is the current efficiency, which is the transconductrance per unit current (gm/IC for BJT and gm/ID for MOSFET). Usually we need large transconductance, but we want to spend small current because we want to save the energy of our battery. So the higher the current efficiency, the better.
At T = 345 K, the BJT current efficiency (gm/IC) is equal to ..... S/A.
One important property that measures the performance of the transistor in analog design is the current efficiency, which is the transconductrance per unit current (gm/IC for BJT and gm/ID for MOSFET). Usually we need large transconductance, but we want to spend small current because we want to save the energy of our battery. So the higher the current efficiency, the better.
If Vov = 0.4, the MOSFET current efficiency (gm/ID) is equal to ..... S/A.
One important property that measures the performance of the transistor in analog design is the current efficiency, which is the transconductrance per unit current (gm/IC for BJT and gm/ID for MOSFET). Usually we need large transconductance, but we want to spend small current because we want to save the energy of our battery. So the higher the current efficiency, the better.
At T = 253 K, the BJT current efficiency (gm/IC) is equal to ..... S/A.
Why CMOS technology is currently the dominant technology for both analog and digital IC design.Select ALL correct answers.
Assume an N-channel MOS device in pinch-off saturation with kn = µn*cox*W/L =0.58 mA/V^2, VTH= 0.7 V and λ=0, the gate is connected to the ground, drain is connected to VDD = 5 V and a current source is connected to the source terminal providing current = 2.8 µA, find the source voltage (Vs) (in volts)
Note: Write the voltage with its sign.
Assume an N-channel MOS device in pinch-off saturation with kn = µn*cox*W/L =0.2 mA/V^2, VTH= 0.8 V and λ=0, the gate is connected to the ground, drain is connected to VDD = 5 V and a current source is connected to the source terminal providing current = 7.7 µA, find the source voltage (Vs) (in volts)
Note: Write the voltage with its sign.
For a MOS transistor operating in pinch-off saturation. If the Channel length is multiplied by 8.3 and "Id" and "W" remain the same , then the overdrive voltage "Vov" is multiplied by how much?